... | ... | @@ -7,4 +7,4 @@ We then investigate the spin dynamics across the channel of a 25nm gate length I |
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## Citation
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**B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017. [[WWW](http://www.european-mrs.com/meetings/2017-fall-meeting)] |
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**B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017. [[WWW]](http://www.european-mrs.com/meetings/2017-fall-meeting) |