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Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor
Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor
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a9c7cc29
Frank C Langbein
Update Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor
Apr 21, 2021
c176bf95
Frank C Langbein
Create Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor
Apr 21, 2021