Info - Quantum Spintronics

Info - Quantum Spintronics

Information about the quantum spintronics projects and summary of published results.

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The projects and published results in this group deal with spin transport in semiconductor devices.

We developed simulation code able to model Dresselhaus and Rashba effects due to spin-orbit couplings for an experimentally verified, ensemble self-consistent Monte Carlo semiconductor device simulator. We demonstrate the ability to coherently control the spin polarisation of electrons and the strain-sensitivity of the drain current in an InGaAs MOSFET transistor at room temperatures in simulation. The code is part of Swansea University’s finite element ensemble Monte Carlo simulation toolbox. A feasibility study on spin injection into dilute magnetic gallium nitride transistors on fabricating the materials has been conducted as well.

People

Publications

  • B Thorpe, FC Langbein, SG Schirmer, K Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. In: 20th Int. Workshop on Computational Nanotechnology (IWCN), 20-24th May, 2019. [PDF:abstract]

  • JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. Dilute Magnetic Contact for a Spin GaN HEMT. In: Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, 16-18th April, 2019. [PDF:abstract]

  • FC Langbein, SG Shermer, K Kalna, J Evans, G Burwell. Dilute Magnetic Semiconductors for Spintronics: Mn:GaN. In: Cardiff Materials Research Network Conference, 17-18th January, 2019. [PDF:abstract] [PDF:poster] [PDF:slides]

  • B Thorpe, SG Schirmer, K Kalna, FC Langbein. Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor. In: 34th Int. Conf. Physics of Semiconductors (ICPS2018), Poster P3_176, 29th July to 3rd August 2018. [PDF:abstract]

  • B Thorpe, K Kalna, FC Langbein, SG Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9th June, 2017. [PDF:abstract] [PDF:poster]

  • B Thorpe, K Kalna, FC Langbein, SG Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017. [DOI:10.1063/1.4994148] [PDF:paper] [Details]

  • B Thorpe, SG Schirmer, K Kalna, FC Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Research Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017. [Details]

PhDs

  • B Thorpe. Monte Carlo Simulations of Spin Transport in Semiconductor Devices. PhD thesis, 2019. [PDF:thesis]

Code

Workshops

  • Mini-Workshop on Spintronics and Magnetic Materials. Tuesday, 8th January 2019, 13:00-17:00, Swansea University, Vivian 9th floor – CTR/SI/Vivian/Rm 918. [Details]

  • Ser Cymru NRN-QuTeE Workshop on Quantum Technologies 2016. 25th October 2016, 10:00-17:00, Cardiff University, School of Computer Science and Informatics, Cardiff, West extension, WX/3.14. [Details]

  • QuTeE Workshop 2015. 16th November 2015, 10:00 - 15:00, Cardiff University, School of Computer Science and Informatics, Cardiff, West extension, WX/3.14. [Details]

Funding

  • 2018, 6 months: Feasibility Study: Spin Injection Into Dilute Magnetic Gallium Nitride Transistors. PI: K Kalna (Swansea University). £50K. [https://compoundsemiconductorhub.org/wp-content/uploads/2018/09/Hub_Newsletter_201809.pdf]

  • January 2015 - December 2017: Data-Driven Simulation of Quantum Spin Network Devices. PI: FC Langbein with SG Schirmer (Swansea University), K Kalna (Swansea University), A Martinez (Swansea University), D Burgarth (Aberystwyth University). NRN82. £120K. [Details]

Locations

The wiki is written and maintained on Qyber\black at https://qyber.black/quantum-spintronics/info-quantum-spintronics

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Contact

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License

CC BY-NC-SA 4.0 This wiki is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

The publications, code, data, etc. may be under a different license. Check the relevant information provided with these products.