Info - Quantum Spintronics

Project ID: 68

Information about the quantum spintronics projects and summary of published results.

The projects and published results in this group deal with spin transport in semiconductor devices.

We developed simulation code able to model Dresselhaus and Rashba effects due to spin-orbit couplings for an experimentally verified, ensemble self-consistent Monte Carlo semiconductor device simulator. We demonstrate the ability to coherently control the spin polarisation of electrons and the strain-sensitivity of the drain current in an InGaAs MOSFET transistor at room temperatures in simulation. The code is part of Swansea University’s finite element ensemble Monte Carlo simulation toolbox. A feasibility study on spin injection into dilute magnetic gallium nitride transistors on fabricating the materials has been conducted as well.

People

Publications

B Thorpe, FC Langbein, SG Schirmer, K Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. In: 20th Int. Workshop on Computational Nanotechnology (IWCN), 20-24th May, 2019. [PDF:abstract]
JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. Dilute Magnetic Contact for a Spin GaN HEMT. In: Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, 16-18th April, 2019. [PDF:abstract]
FC Langbein, SG Shermer, K Kalna, J Evans, G Burwell. Dilute Magnetic Semiconductors for Spintronics: Mn:GaN. In: Cardiff Materials Research Network Conference, 17-18th January, 2019. [PDF:abstract] [PDF:poster] [PDF:slides]
B Thorpe, SG Schirmer, K Kalna, FC Langbein. Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor. In: 34th Int. Conf. Physics of Semiconductors (ICPS2018), Poster P3_176, 29th July to 3rd August 2018. [PDF:abstract]
B Thorpe, K Kalna, FC Langbein, SG Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9th June, 2017. [PDF:abstract] [PDF:poster]
B Thorpe, K Kalna, FC Langbein, SG Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017. [DOI:10.1063/1.4994148] [PDF:paper] [Details]
B Thorpe, SG Schirmer, K Kalna, FC Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Research Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017. [Details]

PhDs

B Thorpe. Monte Carlo Simulations of Spin Transport in Semiconductor Devices. PhD thesis, 2019. [PDF:thesis]

Code

III-V and Si spin transistor Monte Carlo simulation code, part of Swansea University’s finite element ensemble Monte Carlo simulation toolbox.

Workshops

Mini-Workshop on Spintronics and Magnetic Materials. Tuesday, 8th January 2019, 13:00-17:00, Swansea University, Vivian 9th floor – CTR/SI/Vivian/Rm 918. [Details]
Ser Cymru NRN-QuTeE Workshop on Quantum Technologies 2016. 25th October 2016, 10:00-17:00, Cardiff University, School of Computer Science and Informatics, Cardiff, West extension, WX/3.14. [Details]
QuTeE Workshop 2015. 16th November 2015, 10:00 - 15:00, Cardiff University, School of Computer Science and Informatics, Cardiff, West extension, WX/3.14. [Details]

Funding

2018, 6 months: Feasibility Study: Spin Injection Into Dilute Magnetic Gallium Nitride Transistors. PI: K Kalna (Swansea University). £50K. [https://compoundsemiconductorhub.org/wp-content/uploads/2018/09/Hub_Newsletter_201809.pdf]
January 2015 - December 2017: Data-Driven Simulation of Quantum Spin Network Devices. PI: FC Langbein with SG Schirmer (Swansea University), K Kalna (Swansea University), A Martinez (Swansea University), D Burgarth (Aberystwyth University). NRN82. £120K. [Details]