... | ... | @@ -13,18 +13,18 @@ We developed simulation code able to model Dresselhaus and Rashba effects due to |
|
|
|
|
|
# Publications
|
|
|
|
|
|
* **B Thorpe**, FC Langbein, SG Schirmer, K Kalna. **Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors.** _20th Int. Workshop on Computational Nanotechnology (IWCN)_, 20-24th May, 2019.
|
|
|
* **B Thorpe**, FC Langbein, SG Schirmer, K Kalna. **Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors.** In: _20th Int. Workshop on Computational Nanotechnology (IWCN)_, 20-24th May, 2019.
|
|
|
[[PDF:abstract](uploads/1ced1e3f0fd95b221562a76eee9028e8/2019-IWCN.pdf)]
|
|
|
|
|
|
* JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. **Dilute Magnetic Contact for a Spin GaN HEMT.** In: _Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference_, Cardiff, 16-18th April, 2019.
|
|
|
[[PDF:abstract](uploads/c0caf27df7122e4c1715ee82b5c44a7f/2019-SIOE.pdf)]
|
|
|
|
|
|
* **FC Langbein**, SG Shermer, K Kalna, J Evans, G Burwell. **Dilute Magnetic Semiconductors for Spintronics: Mn:GaN.** _Cardiff Materials Research Network Conference_, 17-18th January, 2019.
|
|
|
* **FC Langbein**, SG Shermer, K Kalna, J Evans, G Burwell. **Dilute Magnetic Semiconductors for Spintronics: Mn:GaN.** In: _Cardiff Materials Research Network Conference_, 17-18th January, 2019.
|
|
|
[[PDF:abstract](uploads/6cf16ee27f27a2e8d9aa3c9ebf5f5480/2019-CMRN-Abstract.pdf)]
|
|
|
[[PDF:poster](uploads/8e64343b443374b1f68f604da0646a7c/2019-CMRN-poster.pdf)]
|
|
|
[[PDF:slides](uploads/ef5b4474380b7b9b4992b5b19c5013c4/2019-CMRN-talk_enc.pdf)]
|
|
|
|
|
|
* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor.** _34th Int. Conf. Physics of Semiconductors (ICPS2018)_, Poster P3_176, 29th July to 3rd August 2018.
|
|
|
* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor.** In: _34th Int. Conf. Physics of Semiconductors (ICPS2018)_, Poster P3_176, 29th July to 3rd August 2018.
|
|
|
[[PDF:abstract](uploads/8e04b128e1f7a1ebec5f8a08d4ee35a5/2018-ICPS.pdf")]
|
|
|
|
|
|
* B Thorpe, K Kalna, FC Langbein, SG Schirmer. **Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor.** In: _Proc. Int. Workshop on Computational Nanotechnology_, pp. 168-169, Windermere, UK, 6-9th June, 2017.
|
... | ... | @@ -36,13 +36,13 @@ We developed simulation code able to model Dresselhaus and Rashba effects due to |
|
|
[[PDF:paper](https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf)]
|
|
|
[[Details](Monte-Carlo-Simulations-of-Spin-Transport-in-Nanoscale-InGaAs-Field-Effect-Transistors)]
|
|
|
|
|
|
* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
|
|
|
* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** In: _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
|
|
|
[[Details](Monte-Carlo-simulation-of-Spin-Transport-and-Recovery-in-a-25-nm-gate-length-InGaAs-Field-Effect-Transistor)]
|
|
|
|
|
|
# PhDs
|
|
|
|
|
|
* B Thorpe. **Monte Carlo Simulations of Spin Transport in Semiconductor Devices.** PhD thesis, 2019.
|
|
|
[[PDF:dissertation](uploads/314d6f64073b0a0725e4591d83dacd08/2019-BThorpe-PhD.pdf)]
|
|
|
[[PDF:thesis](uploads/314d6f64073b0a0725e4591d83dacd08/2019-BThorpe-PhD.pdf)]
|
|
|
|
|
|
# Code
|
|
|
|
... | ... | |