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* [Karol Kalna](https://www.swansea.ac.uk/staff/engineering/kalna-k/), [College of Engineering](https://www.swansea.ac.uk/engineering/), [Swansea University](https://www.swansea.ac.uk/)
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* [Sophie Shermer](https://qyber.black/lw1660), [Physics](https://www.swansea.ac.uk/physics), [Swansea University](https://www.swansea.ac.uk/)
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* [Frank C Langbein](https://qyber.black/xis10z), [School of Computer Science and Informatics](https://www.cardiff.ac.uk/computer-science), [Cardiff University](https://www.cardiff.ac.uk/); [langbein.org](https://langbein.org/)
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* [JE Evans](https://orcid.org/0000-0002-6511-4215), [Center for Nanohealth](https://www.swansea.ac.uk/nanohealth/), [Swansea University](https://www.swansea.ac.uk/)
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* [Jon E Evans](https://orcid.org/0000-0002-6511-4215), [Center for Nanohealth](https://www.swansea.ac.uk/nanohealth/), [Swansea University](https://www.swansea.ac.uk/)
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* [Gregory Burwell](https://www.swansea.ac.uk/staff/science/physics/burwell-g/), [Physics](https://www.swansea.ac.uk/physics), [Swansea University](https://www.swansea.ac.uk/)
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# Publications
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* JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. **Dilute Magnetic Contact for a Spin GaN HEMT.** In: _Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference_, Cardiff, 16-18 April, 2019.
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* B Thorpe, K Kalna, FC Langbein, SG Schirmer. **Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor.** In: _Proc. Int. Workshop on Computational Nanotechnology_, pp. 168-169, Windermere, UK, 6-9 June, 2017.
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* B Thorpe, K Kalna, FC Langbein, SG Schirmer. **Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors.** _J Applied Physics_, **122**, 223903, 2017. [[Details](Monte-Carlo-Simulations-of-Spin-Transport-in-Nanoscale-InGaAs-Field-Effect-Transistors)]
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# PhDs
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* B Thorpe. **Monte Carlo Simulations of Spin Transport in Semiconductor Devices.** PhD thesis, 2019.
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* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. **Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor.** In: _Proc. Int. Workshop on Computational Nanotechnology_, pp. 168-169, Windermere, UK, 6-9 June, 2017.
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* B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. **Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors.** _J Applied Physics_, **122**, 223903, 2017. [[Details](Monte-Carlo-Simulations-of-Spin-Transport-in-Nanoscale-InGaAs-Field-Effect-Transistors)]
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# Presentations
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* **B. Thorpe**, F. Langbein, S. Schirmer, K. Kalna. **Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors.** _20th Int. Workshop on Computational Nanotechnology (IWCN)_, 20-24th May 20-24, 2019.
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* **B. Thorpe**, S. Schirmer, K. Kalna, F. C. Langbein. **Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor.** _34th Int. Conf. Physics of Semiconductors (ICPS2018)_, Poster P3_176, 29th July to 3rd August 2018.
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* **B. Thorpe**, Sophie Schirmer, Karol Kalna, Frank Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
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* **B. Thorpe**, K. Kalna, F. C. Langbein, S. G. Schirmer. **Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor.** _Int. Workshop on Computational Nanotechnology_, pp. 168-169, Windermere, UK, 6-9 June, 2017.
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* **B Thorpe**, FC Langbein, SG Schirmer, K Kalna. **Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors.** _20th Int. Workshop on Computational Nanotechnology (IWCN)_, 20-24th May 20-24, 2019.
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* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor.** _34th Int. Conf. Physics of Semiconductors (ICPS2018)_, Poster P3_176, 29th July to 3rd August 2018.
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* **B Thorpe**, SG Schirmer, K Kalna, FC Langbein. **Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor.** _European Materials Research Society 2017 Fall Meeting_, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
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* **B Thorpe**, K Kalna, FC Langbein, SG Schirmer. **Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor.** _Int. Workshop on Computational Nanotechnology_, pp. 168-169, Windermere, UK, 6-9 June, 2017.
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# Code
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... | ... | @@ -38,4 +41,4 @@ We developed simulation code able to model Dresselhaus and Rashba effects due to |
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[![CC BY-NC-SA 4.0](https://langbein.org/wp-content/plugins/creative-commons-configurator-1/media/cc/by-nc-sa/4.0/80x15.png)](https://creativecommons.org/licenses/by-nc-sa/4.0/) This wiki is licensed under a [Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License](https://creativecommons.org/licenses/by-nc-sa/4.0/).
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The publications, code, data, etc. released may be under a different license. Check the relevant information provided with these products. |
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\ No newline at end of file |
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The publications, code, data, etc. may be under a different license. Check the relevant information provided with these products. |
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\ No newline at end of file |