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# People
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* [Ben Thorpe](https://www.supercomputing.wales/team/ben-thorpe/), [Physics](https://www.swansea.ac.uk/physics), [Swansea University](https://www.swansea.ac.uk/); [Supercomputing Wales](https://www.supercomputing.wales/)
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* [Sophie Shermer](https://qyber.black/lw1660), [Physics](https://www.swansea.ac.uk/physics), [Swansea University](https://www.swansea.ac.uk/)
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* [Karol Kalna](https://www.swansea.ac.uk/staff/engineering/kalna-k/), [College of Engineering](https://www.swansea.ac.uk/engineering/), [Swansea University](https://www.swansea.ac.uk/)
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* [Frank C Langbein](https://qyber.black/xis10z), [School of Computer Science and Informatics](https://www.cardiff.ac.uk/computer-science), [Cardiff University](https://www.cardiff.ac.uk/); [langbein.org](https://langbein.org/)
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* [JE Evans](https://orcid.org/0000-0002-6511-4215), [Center for Nanohealth](https://www.swansea.ac.uk/nanohealth/), [Swansea University](https://www.swansea.ac.uk/)
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* [Gregory Burwell](https://www.swansea.ac.uk/staff/science/physics/burwell-g/), [Physics](https://www.swansea.ac.uk/physics), [Swansea University](https://www.swansea.ac.uk/)
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# Publications
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* JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. Dilute Magnetic Contact for a Spin GaN HEMT. Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, 16-18 April, 2019.
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* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017
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* B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017.
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* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017
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# Presentations
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* B. Thorpe, **F. Langbein**, S. Schirmer, K. Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. 20th International Workshop on Computational Nanotechnology (IWCN), 20-24th May 20-24, 2019.
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* **B. Thorpe**, S. Schirmer, K. Kalna, F. C. Langbein. Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor. 34th International Conference on the Physics of Semiconductors (ICPS2018), Poster P3_176, 29th July to 3rd August 2018.
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* **B. Thorpe**, Sophie Schirmer, Karol Kalna, Frank Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Resdarch Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
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* **B. Thorpe**, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017.
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# Code
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* Si and III-V spin transistor monte carlo simulation code, part of Swansea University’s [finite element ensemble Monte Carlo simulation toolbox](https://engweb.swan.ac.uk/~karolkalna/) |