... | @@ -12,11 +12,10 @@ |
... | @@ -12,11 +12,10 @@ |
|
* JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. Dilute Magnetic Contact for a Spin GaN HEMT. Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, 16-18 April, 2019.
|
|
* JE Evans, G Burwell, FC Langbein, SG Shermer, K Kalna. Dilute Magnetic Contact for a Spin GaN HEMT. Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, 16-18 April, 2019.
|
|
* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017
|
|
* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017
|
|
* B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017.
|
|
* B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017.
|
|
* B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017
|
|
|
|
|
|
|
|
# Presentations
|
|
# Presentations
|
|
|
|
|
|
* B. Thorpe, **F. Langbein**, S. Schirmer, K. Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. 20th International Workshop on Computational Nanotechnology (IWCN), 20-24th May 20-24, 2019.
|
|
* **B. Thorpe**, F. Langbein, S. Schirmer, K. Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. 20th International Workshop on Computational Nanotechnology (IWCN), 20-24th May 20-24, 2019.
|
|
* **B. Thorpe**, S. Schirmer, K. Kalna, F. C. Langbein. Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor. 34th International Conference on the Physics of Semiconductors (ICPS2018), Poster P3_176, 29th July to 3rd August 2018.
|
|
* **B. Thorpe**, S. Schirmer, K. Kalna, F. C. Langbein. Monte Carlo Simulations of Spin Transport in an InGaAs Field Effect Transistor. 34th International Conference on the Physics of Semiconductors (ICPS2018), Poster P3_176, 29th July to 3rd August 2018.
|
|
* **B. Thorpe**, Sophie Schirmer, Karol Kalna, Frank Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Resdarch Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
|
|
* **B. Thorpe**, Sophie Schirmer, Karol Kalna, Frank Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Resdarch Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017.
|
|
* **B. Thorpe**, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017.
|
|
* **B. Thorpe**, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017.
|
... | | ... | |