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# Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors
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A1
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Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor (MOSFET) with a CMOS compatible architecture. We observe non-uniform decay of the net magnetization between the source and gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and drain. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is strain-sensitive and can be increased twofold by strain induced into the channel.
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<a href="https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf"><img src="https://img.shields.io/badge/paper-PDF-yellowgreen?style=for-the-badge&logo=adobe-acrobat-reader" alt="PDF"/></a>
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{: #hello-world}
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| <img src="https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/teaser.jpg" alt="Dresselhaus Hamiltonian vectors" height="350px"/> | [<img src="http://img.youtube.com/vi/ebIyPsloExI/0.jpg" alt="Electron Spin Dynamics in an InGaAS MOSFET Device" height="350px"/>](http://www.youtube.com/watch?v=ebIyPsloExI)|
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| :--- | :--- |
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|Figure: *Dresselhaus Hamiltonian vectors (in units of meV) of 4 electron ensembles corresponding to thin slices along the channel for a single Monte Carlo run (VG = 0.9V, VD = 0.5V) orange (far left) x=-55nm, RichBlue (centre-left) x=-20nm, Cyan (centre right) x=0nm, Forest Green (far right) x=27nm. Grey arrow show the scale whilst Red arrows show the average.*|Video: *3D model of In0.3Ga0.7As MOSFET device showing spin polarisation of electrons, injected with s_x polarisation, along n-channel with 4% strain in the [001] direction (Red) and unstrained (Purple). Created with our finite-element quantum-corrected ensemble Monte Carlo simulator with electron spins in a realistic nanoscale III-V field effect transistor model to investigate spin effects within a realistic semiconductor device. The Monte Carlo simulator has in particular been augmented to consider Dresselhaus and Rashba effects.*|
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| |Music: *Ghostpocalypse - 8 Epilog Kevin MacLeod (incompetech.com) Licensed under Creative Commons: By Attribution 3.0 License, http://creativecommons.org/licenses/by/3.0/*|
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A2
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## Citation
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B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. **Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors.** J Applied Physics, **122**, 223903, 2017. [[DOI:10.1063/1.4994148](https://doi.org/10.1063/1.4994148)] [[arXiv:1610.04114](http://arxiv.org/abs/1610.04114)] [[PDF https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf](https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf)] |