... | ... | @@ -10,3 +10,8 @@ Spin-based logic devices could operate at very high speed with very low energy c |
|
|
## Citation
|
|
|
|
|
|
B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. **Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors.** _J Applied Physics_, **122**, 223903, 2017. [[DOI:10.1063/1.4994148](https://doi.org/10.1063/1.4994148)] [[arXiv:1610.04114](http://arxiv.org/abs/1610.04114)] [[PDF https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf](https://d.qyber.black/paper/quantum-spintronics-paper-ingaas-spin-transport/paper.pdf)]
|
|
|
|
|
|
## License
|
|
|
|
|
|
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in "B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. J Applied Physics, 122, 223903, 2017" and may be found at
|
|
|
[DOI:10.1063/1.4994148](https://doi.org/10.1063/1.4994148). |